- TS Series
Specialized furnaces for R&D, MEMS, Photonics, Semiconductors
1-4 tubes configuration, 4” – 12” wafer size
Maximum flexibility in configuration (e.g. # tubes, process configuration and flat-zone length)
Diffusion, Oxidation and PECVD and LPCVD deposition processes (e.g. Dry/Wet Oxidation, Nitride, TEOS, Poly etc.)
Flat-zone temperature control within ±0,5 °C
Temperature max 1300 °C
1-4 tubes configuration, 4” – 12” wafer size
Maximum flexibility in configuration (e.g. # tubes, process configuration and flat-zone length)
Diffusion, Oxidation and PECVD and LPCVD deposition processes (e.g. Dry/Wet Oxidation, Nitride, TEOS, Poly etc.)
Flat-zone temperature control within ±0,5 °C
Temperature max 1300 °C
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